| PART |
Description |
Maker |
| ST75C540 ST75C530FP-A ST75C540FP-A |
SUPER INTEGRATED DEVICES WITH DSP, AFE & MEMORIES FOR TELEPHONY, MODEM, FAX OVER INTERNET & POTS LINES
SUPER INTEGRATED DEVICESWITH DSP, AFE & MEMORIES FORTELEPHONY,MODEM, FAXOVERINTERNET& POTSLINES
|
SGS Thomson Microelectronics
ST Microelectronics
|
| ES1D ES1J ES1E |
SUPER MOUNT DEVICES RECTIFIERS
|
Jinan Jingheng (Group) Co.,Ltd
|
| SFS1002G SFS1005G |
Discrete Devices -Diode-Super Fast Rectifier
|
Taiwan Semiconductor
|
| 2FAG-M12R |
Integrated Passive & Active Devices
|
Bourns, Inc.
|
| VT82C686B |
PCI Super-I/O Integrated Peripheral Controller
Super South / South Bridge
|
ETC[ETC]
VIA
|
| SX1211I084TRT |
Lowest Power Integrated UHF Transceiver Short Range Devices
|
Semtech Corporation
|
| L76761CSYC |
The Super Bright Yellow source color devices are made with DH InGaAIP on GaAs substrate Light Emitting Diode.
|
Kingbright Electronic
KINGBRIGHT[Kingbright Corporation]
|
| HCPL0600 HCPL0601 HCPL0611 HCPL0637 HCPL0638 HCPL0 |
The HCPL06XX optocouplers consist of an AlGaAS LED, optically coupled to a very high speed integrated photo-detector logic gate with a strobable output (single channel devices).
|
Fairchild Semiconductor
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| LPC61W492 |
Integrated Super I/O Controller for LPC Bus with Game and MIDI Ports/Plus Hardware Monitoring Functions
|
Standard Microsystems
|
| NANOSMDM100 |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
| EPC1064 EPC1064V EPC1 EPC1213 EPC1441 EP20K200C EP |
CONFIGURATION DEVICES FOR SRAM-BASED LUT DEVICES
|
Altera Corporation
ETC
|
